Optoelectronic property refinement of FASnI3 films for photovoltaic application
Publication Type
Journal Article
Publication Date (Issue Year)
2021
Journal Name
Materials Letters
Abstract
Tin (Sn) is a promising substitute for lead (Pb) in organic–inorganic hybrid halide perovskite-photovoltaic devices, but it is prone to delivering low power conversion efficiencies (PCEs) due to the poor quality of Sn-perovskite films. In this work, anilinium hypophosphite (AHP) co-additive is used to fabricate high-quality FASnI3 (FA+: formamidinium) perovskite films with suppressed phase-segregation and prolonged charge carrier lifetime. Perovskite films containing 0.05 M AHP are used to fabricate solar cells and deliver improved power conversion efficiency (PCE) of up to 5.48% (control devices: 4.04%). AHP eliminates the phase separation caused by SnF2 in the absorber, leading to films with enhanced optoelectronic properties, hence the high performance of AHP-based devices.
Keywords
Optoelectronic, refinement, FASnI3 films, photovoltaic application
Rsif Scholar Name
Jorim Okoth Obila
Thematic Area
Energy including Renewables
Africa Host University (AHU)
University of Nairobi (UoN), Kenya
Funding Statement
International Science Programme in Physics (Sweden), PASET regional scholarship and innovation fund, National Natural Science Foundation of China (Grant No. 11904115), the Swedish Research Council (VR starting grant: 2018-04809), and the Swedish STINT grant (CH2018-7655) for financial support. We thank Prof. Feng Gao for the laboratory and chemicals.
Recommended Citation
Obila, J. O., Lei, H., Ayieta, E. O., Ogacho, A. A., Aduda, B. O., & Wang, F. (2021). Optoelectronic property refinement of FASnI3 films for photovoltaic application. Materials Letters, 300, 130099. https://doi.org/10.1016/j.matlet.2021.130099